Semiconductor light emitting device

ABSTRACT

Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, a conductive support member disposed under the second conductive semiconductor layer, an insulating layer disposed between the second conductive semiconductor layer and the conductive support member, and a stepped conductive layer disposed between the second conductive semiconductor layer and the conductive support member. The stepped conductive layer includes a lower parts and an upper parts. The upper parts are directly contacted with the second conductive semiconductor layer. The lower parts are disposed between the insulating layer and the conductive support member. The insulating layer is laterally disposed between the plurality of upper parts.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a continuation of application Ser. No.14/084,419, filed on Nov. 19, 2013, which is a continuation Ser. No.13/829,647, now U.S. Pat. No. 8,614,457, filed on Mar. 14, 2013, whichis a continuation Ser. No. 13/161,172, filed Jun. 15, 2011, now U.S.Pat. No. 8,415,705, which is a continuation of application Ser. No.12/618,490, filed on Nov. 13, 2011, now U.S. Pat. No. 8,022,435, whichclaims priority under 35 U.S.C. 119 to Korean Patent Application No.10-2008-0113228 (filed on Nov. 14, 2008), which is hereby incorporatedby reference in its entirety.

BACKGROUND

The embodiment relates to a semiconductor light emitting device.

Groups III-V nitride semiconductors have been variously applied to anoptical device such as blue and green light emitting diodes (LED), ahigh speed switching device, such as a MOSFET (Metal Semiconductor FieldEffect Transistor) and an HEMT (Hetero junction Field EffectTransistors), and a light source of a lighting device or a displaydevice.

The nitride semiconductor is mainly used for the LED or an LD (laserdiode), and studies have been continuously conducted to improve themanufacturing process or light efficiency of the nitride semiconductor.

SUMMARY

The embodiment provides a semiconductor light emitting device capable ofenhancing adhesive force between a semiconductor layer and anotherlayer.

The embodiment provides a semiconductor light emitting device, which canenhance adhesive force between a second conductive semiconductor layerand a channel layer on the second conductive semiconductor layer byforming a roughness pattern on an outer surface of the second conductivesemiconductor layer.

An embodiment provides a semiconductor light emitting device comprising:a plurality of compound semiconductor layers including a firstconductive semiconductor layer, an active layer and a second conductivesemiconductor layer; an electrode layer on the plurality of compoundsemiconductor layers; and a channel layer including protrusion andformed along a peripheral portion of an upper surface of the pluralityof compound semiconductor layers.

An embodiment provides a semiconductor light emitting device comprising:a light emitting structure including a first conductive semiconductorlayer, an active layer on a top surface of the first conductivesemiconductor layer and a second conductive semiconductor layer on a topsurface of the active layer; an electrode disposed on a bottom surfaceof the light emitting structure; a recess recessed from a top surface ofthe light emitting structure; an electrode layer on the top surface ofthe light emitting structure; a transmittive layer disposed between thelight emitting structure and the electrode layer; and a conductivesupport member disposed on a top surface of the electrode layer, whereinthe recess is recessed in a direction toward the bottom surface of thelight emitting structure, wherein the transmittive layer includes afirst portion disposed between the top surface of the light emittingstructure and the electrode layer and a second portion extended outwardbeyond an outer wall of the light emitting structure, wherein aprotrusion of the first portion of the transmittive layer is disposed inthe recess.

The details of one or more embodiments are set forth in the accompanyingdrawings and the description below. Other features will be apparent fromthe description and drawings, and from the claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a side sectional view showing a semiconductor light emittingdevice according to a first embodiment;

FIG. 2 is a bottom view showing the semiconductor light emitting deviceshown in FIG. 1;

FIGS. 3 to 12 are views showing the procedure of manufacturing thesemiconductor light emitting device shown in FIG. 1; and

FIG. 13 is a side sectional view showing a semiconductor light emittingdevice according to a second embodiment.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Hereinafter, a semiconductor light emitting device according to anembodiment will be described with reference to the accompanyingdrawings. In the description of the embodiment, the term “on” or “under”of each layer will be described with reference to the accompanyingdrawings and thickness of each layer is not limited to thickness shownin the drawings.

In the description of an embodiment, it will be understood that, when alayer (or film), a region, a pattern, or a structure is referred to asbeing “on” or “under” another substrate, another layer (or film),another region, another pad, or another pattern, it can be “directly” or“indirectly” on the other substrate, layer (or film), region, pad, orpattern.

FIG. 1 is a side sectional view showing a semiconductor light emittingdevice according to a first embodiment and FIG. 2 is a bottom viewshowing the semiconductor light emitting device shown in FIG. 1.

Referring to FIGS. 1 and 2, the semiconductor light emitting device 100includes a light emitting structure 135, a channel layer 140 havingprotrusions 145, an electrode layer 150 and a conductive support member160.

The semiconductor light emitting device 100 includes a compoundsemiconductor, e.g., an LED based on III-V group compoundsemiconductors, and the LED may include a color LED emitting blue light,green light or red light or an UV LED. The light emitted from the LEDmay be variously realized within the technical scope of the embodiment.

The light emitting structure 135 includes a first conductivesemiconductor layer 110, an active layer 120 and a second conductivesemiconductor layer 130.

The first conductive semiconductor layer 110 may include one selectedfrom the group consisting of GaN, AlN, AlGaN, InGaN, InN, InAlGaN,AlInN, AlGaAs, GaP, GaAs, GaAsP and AlGaInP, which are compoundsemiconductors of III-V group elements doped with a first conductivedopant. When the first conductive semiconductor layer 110 is an N typesemiconductor layer, the first conductive dopant includes an N typedopant such as Si, Ge, Sn, Se or Te. The first conductive semiconductorlayer 110 may have a single layer or a multilayer. However, theembodiment is not limited thereto.

An electrode 171 having a predetermined shape or a predetermined patternis formed under the first conductive semiconductor layer 110, and mayhave a predetermined shape or may be formed in a predetermined pattern.However, the embodiment is not limited thereto. The first conductivesemiconductor layer 110 may be provided on a lower surface thereof witha roughness pattern.

The active layer 120 is formed on the first conductive semiconductorlayer 110 and may have a single quantum well structure or amulti-quantum well structure. The active layer 120 may have anarrangement of a well layer and a barrier layer using compoundsemiconductor materials of the III-V group elements. For example, theactive layer 120 may have an arrangement of an InGaN well layer and aGaN barrier layer. A conductive clad layer may be formed on and/or underthe active layer 120, and include an AlGaN-based layer.

The second conductive semiconductor layer 130 is formed on the activelayer 120, and may include one selected from the group consisting ofGaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsPand AlGaInP, which are the compound semiconductors of III-V groupelements doped with a second conductive dopant. When the secondconductive semiconductor layer 120 is a P type semiconductor layer, thesecond conductive dopant includes a P type dopant such as Mg and Zn. Thesecond conductive semiconductor layer 120 may have a single layer or amultilayer. However, the embodiment is not limited thereto.

The light emitting structure 135 may include an N type semiconductorlayer or a p type semiconductor layer on the second conductivesemiconductor layer 120. Further, the first conductive semiconductorlayer 110 may be provided as a p type semiconductor layer and the secondconductive semiconductor layer 130 may be provided as an N typesemiconductor layer. The light emitting structure 135 may include atleast one of an N-P junction structure, a P-N junction structure, anN-P-N junction structure and a P-N-P junction structure.

The channel layer 140 and the electrode layer 150 are formed on thesecond conductive semiconductor layer 130. The channel layer 140 isformed along the peripheral portion of an upper surface of the lightemitting structure 135, and the electrode layer 150 is formed at theinner side of the upper surface of the light emitting structure 135.

The channel layer 140 may have a band shape, a ring shape or a frameshape and can be formed along the peripheral surface of the secondconductive semiconductor layer 130 in the form of a circle or a polygon.

An inner side of the channel layer 140 makes contact with an outer sideof an upper surface of the second conductive semiconductor layer 130,and an outer side of the channel layer 140 extends to the extent thatthe outer side of the channel layer 140 is exposed to the peripheralsurface 103 of the light emitting structure 135. Thus, the channel layer140 is arranged such that an outer wall of the light emitting structure135 can be spaced apart from the electrode layer 150 or the conductivesupport member 160.

The channel layer 140 may include transmittive insulating material ortransmittive conductive material. For example, the channel layer 140 mayinclude at least one selected from the group consisting of SiO₂,SiO_(x), SiO_(x)N_(y), Si₃N₄, Al₂O₃, TiO₂, indium tin oxide (ITO),indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminumzinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tinoxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO),gallium zinc oxide (GZO), IrOx, RuOx, RuOx/ITO, Ni/IrOx/Au andNi/IrOx/Au/ITO.

The channel layer 140 may include material, which allows laser to passtherethrough, or material which generates no fragments when laser passestherethrough. Further, the channel layer 140 may include transmittivematerial which can be bonded to the material of the second conductivesemiconductor layer 130.

The protrusions 145 are formed at the under surface of the inner side ofthe channel layer 140. The protrusion 145 protrude toward the lightemitting structure 135, that is, the protrusion 145 protrude downward,so adhesive force of the channel layer 140 can be enhanced.

The protrusion 145 of the channel layer 140 may be formed on the secondconductive semiconductor layer 130 in the form of a band with aconcave-convex section. The protrusion 145 can be provided in acontinuous pattern such as a closed loop, or a discontinuous patternalong the peripheral portion of the upper portion of the secondconductive semiconductor layer 130. Further, the protrusion 145 formedon the second conductive semiconductor layer 130 may have a singleconfiguration, a double configuration or a multiple configuration, andmay have a zigzag shape, an irregular shape and the like.

The protrusion 145 of the channel layer 140 may have a polygonalsectional shape, such as a triangle, a rectangle, a lozenge or atrapezoid, a horn sectional shape, a semispherical sectional shape, anda semi-oval sectional shape. The shape of the protrusion 145 can bemodified within the technical scope of the embodiment.

The protrusion 145 may have a height H1 (i.e. protrusion length) ofabout 10 nm to about 300 nm. The dual protrusion 145 may have the sameheight or heights different from each other. For example, the height ofthe dual protrusion 145 may be reduced or increased toward an outerportion of the second conductive semiconductor layer 130.

The protrusion 145 of the channel layer 140 may be spaced apart from theouter wall of the light emitting structure 135 by a predetermineddistance D1, e.g., about 1 μm to about 5 μm, and the distance D1 mayvary according to the size of the light emitting structure 135.

A contact area between the channel layer 140 and the second conductivesemiconductor layer 130 is increased due to the protrusions 145. Theprotrusion 145 can prevent the second conductive semiconductor layer 130from moving in an outward direction Al of the second conductivesemiconductor layer 130.

Further, the protrusion 145 of the channel layer 140 can delay orprevent penetration of moisture in an inward direction A2 of the secondconductive semiconductor layer 130.

The electrode layer 150 is formed on the second conductive semiconductorlayer 130. The electrode layer 150 may be formed on the channel layer140.

A layer or a plurality of patterns is formed between the secondconductive semiconductor layer 130 and the electrode layer 150, socurrent distribution caused by resistance difference can be dispersed.The layer or the plurality of patterns includes at least one of SiO₂,SiO_(x), SiO_(x)N_(y), Si₃N₄, Al₂O₃, TiO₂, ITO, IZO, IZTO, IAZO, IGZO,IGTO, AZO, ATO, GZO, IrOx, and RuOx.

The electrode layer 150 is formed on the second conductive semiconductorlayer 130. The electrode layer 150 may comprises at least one of areflective electrode layer, an ohmic-contact layer, and an adhesionlayer. The electrode layer 150 may include at least one of metallicmaterial and oxide material. The reflective electrode layer may includesat least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, or theselective combination of the above. The ohmic-contact layer may includeat least one at least one selected from the group consisting of ITO(indium tin oxide), IZO (indium zinc oxide), IGZO(indium zinc tinoxide), IAZO (indium aluminum zinc oxide), IGZO(indium gallium zincoxide), IGTO(indium gallium tin oxide), AZO(aluminum zinc oxide),ATO(antimony tin oxide), GZO(gallium zinc oxide), IrOx, RuOx, RuOx/ITO,Ni/IrOx/Au, and Ni/IrOx/Au/ITO, Pt, Ni, Au, Rh and Pd. The adhesionlayer may include at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu,Ag, and Ta. The electrode layer 150 may comprises a seed metal.

The electrode layer 150 can be prepared in the form of a layer or aplurality of patterns. However, the embodiment is not limited thereto.

An ohmic contact layer (not shown) may be formed between the electrodelayer 150 and the second conductive semiconductor layer 130. The ohmiccontact layer may include at least one selected from the groupconsisting of ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, GZO, IrOx,RuOx, RuOx/ITO, Ni/IrOx/Au and Ni/IrOx/Au/ITO.

The conductive support member 160 is formed on the electrode layer 150.The conductive support member 160 may function as abase substrate and isused to supply power. The conductive support member 160 can be preparedin the form of a layer or a plurality of patterns.

The conductive support member 160 may include Cu, Au, Ni, Mo, Cu—W, andcarrier wafer such as Si, Ge, GaAs, ZnO, SiC, SiGe, ad GaN. Theconductive support member 160 may be formed through an electrolyticplating scheme or can be prepared in the form of a sheet.

The electrode layer 150 and the conductive support member 160 can beprepared in the form of a single electrode layer having a predeterminedthickness.

FIGS. 3 to 12 are views showing the procedure of manufacturing thesemiconductor light emitting device shown in FIG. 1.

Referring to FIG. 3, a substrate 101 is loaded on growing equipment anda compound semiconductor layer of II to VI group elements is formed onthe substrate 101.

The growing equipment may include E-beam deposition equipment, physicalvapor deposition (PVD) equipment, chemical vapor deposition (CVD)equipment, plasma laser deposition (PLD) equipment, a dual-type thermalevaporator, sputtering equipment and metal organic chemical vapordeposition (MOCVD) equipment. However, the embodiment is not limitedthereto.

The substrate 101 may include one selected from the group consisting ofsapphire (Al₂O₃), GaN, SiC, ZnO, Si, GaP, InP, GA₂O₃, a conductivesubstrate and GaAs. The substrate 101 is provided thereon with aconcave-convex pattern. Further, a layer or a pattern using compoundsemiconductors of II to VI group elements may be formed on the substrate101. For example, at least one of a ZnO layer (not shown), a bufferlayer (not shown) and an undoped semiconductor layer (not shown) may beformed on the substrate 101.

The buffer layer and the undoped semiconductor layer may include thecompound semiconductors of the III-V group elements. The buffer layerreduces a lattice constant difference from the substrate 101, and theundoped semiconductor layer may include an undoped GaN-basedsemiconductor layer.

The light emitting structure 135 including the compound semiconductorlayers is formed on the substrate 101. The first conductivesemiconductor layer 110 is formed on the substrate 101, the active layer120 is formed on the first conductive semiconductor layer 110, and thesecond conductive semiconductor layer 130 is formed on the active layer120.

The first conductive semiconductor layer 110 may include one selectedfrom the group consisting of GaN, AlN, AlGaN, InGaN, InN, InAlGaN,AlInN, AlGaAs, GaP, GaAs, GaAsP and AlGaInP, which are compoundsemiconductors of III-V group elements doped with the first conductivedopant. When the first conductive semiconductor layer 110 is the N typesemiconductor layer, the first conductive dopant includes the N typedopant such as Si, Ge, Sn, Se or Te. The first conductive semiconductorlayer 110 may have the single layer or the multilayer. However, theembodiment is not limited thereto.

The active layer 120 is formed on the first conductive semiconductorlayer 110 and may have the single quantum well structure or themulti-quantum well structure. The active layer 120 may have anarrangement of the well layer and the barrier layer using the compoundsemiconductor materials of the III-V group elements. For example, theactive layer 120 may have an arrangement of the InGaN well layer and theGaN barrier layer.

The conductive clad layer may be formed on and/or under the active layer120, and may include the AlGaN-based layer.

The second conductive semiconductor layer 130 is formed on the activelayer 120, and may include one selected from the group consisting ofGaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsPand AlGaInP, which are the compound semiconductors of the III-V groupelements doped with the second conductive dopant. When the secondconductive semiconductor layer 120 is the P type semiconductor layer,the second conductive dopant includes the P type dopant such as Mg andZn. The second conductive semiconductor layer 120 may have the singlelayer or the multilayer. However, the embodiment is not limited thereto.

The first conductive semiconductor layer 110, the active layer 120, andthe second conductive semiconductor layer 130 can be defined as thelight emitting structure 135. A third conductive semiconductor layer(not shown), e.g., an N type semiconductor layer or a p typesemiconductor layer, can be formed on the second conductivesemiconductor layer 130. The light emitting structure 135 may include atleast one of the N-P junction structure, the P-N junction structure, theN-P-N junction structure and the P-N-P junction structure.

Referring to FIG. 4, grooves 115 are formed along the peripheral portionof the upper surface of the second conductive semiconductor layer 130 inan individual chip area. The grooves 115 may have a roughness structure,such as a concave-convex structure. The grooves 115 may have a singleconfiguration, a double configuration or a multiple configuration.

The grooves 115 have positions and shapes corresponding to those of theprotrusions 145 of the channel layer 140.

The grooves 115 are formed by forming a mask pattern relative to thesecond conductive semiconductor layer 130, and etching the mask patternusing a predetermined etching scheme, e.g., a dry etching scheme.However, the embodiment is not limited to thereto.

FIG. 5 is a plan view showing a first pattern of the groove shown inFIG. 4.

Referring to FIGS. 4 and 5, the grooves 115 are formed along the outerperipheral portion of a single chip in the form of a double band shapeand can be provided in the form of a continuous pattern such as a closedloop. The dual grooves 115 may be regularly or irregularly spaced apartfrom each other by taking adhesive force into consideration.

The grooves 115 may have a zigzag shape or an irregular shape along theouter peripheral portion of the second conductive semiconductor layer130. Further, the grooves 115 may have a polygonal sectional shape, suchas a triangle, a rectangle, a lozenge or a trapezoid, a horn sectionalshape, a semispherical sectional-shape, and a semi-oval sectional shape.The shape of the grooves 115 can be modified within the technical scopeof the embodiment. Further, the grooves 115 may be arranged in one row,two rows or more on the basis of an outer surface of the chip and mayhave the same depth or not.

Each groove 115 may have a depth H1 of about 100 nm to about 300 nm fromthe upper surface of the second conductive semiconductor layer 130.

FIG. 6 is a plan view showing a second pattern of the groove shown inFIG. 4.

Referring to FIG. 6, the grooves 115A and 115B may have a dual bandstructure and can be prepared in the form of a discontinuous pattern.Further, the dual grooves 115A and 115B may offset from each other toenhance adhesive strength.

Referring to FIGS. 4 and 6, the channel layer 140 is formed along theouter peripheral portion of the second conductive semiconductor layer130.

The channel layer 140 is formed along the peripheral surface of theupper surface of the second conductive semiconductor layer 130 in theform of a ring shape or a frame shape in a boundary area of anindividual chip. The channel layer 140 can be prepared in the form of acontinuous pattern.

The channel layer 140 may include the insulating material or theconductive material. For example, the channel layer 140 may include atleast one selected from the group consisting of SiO₂, SiO_(x),SiO_(x)N_(y), Si₃N₄, Al₂O₃, TiO₂, ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO,ATO, GZO, IrOx, RuOx, RuOx/ITO, Ni/IrOx/Au and Ni/IrOx/Au/ITO.

Further, the channel layer 140 may further include material, whichallows laser to pass therethrough, or material which generates nofragments when laser passes therethrough. Further, the channel layer 140may include transmittive material capable of enhancing adhesive forcebetween the second conductive semiconductor layer 130 and the channellayer 140.

The protrusions 145 of the channel layer 140 are aligned correspondingto the grooves 115 of the second conductive semiconductor layer 130.Since the protrusions 145 have shape and position corresponding to thoseof the grooves 115, detailed description thereof will be omitted.

The protrusions 145 of the channel layer 140 may be spaced apart fromthe outer wall of the light emitting structure 135 by a predetermineddistance, e.g., about 1 μm to about 5 μm, and the distance may varydepending on the size of the light emitting structure 135.

The contact area between the channel layer 140 and the second conductivesemiconductor layer 130 is increased due to the protrusions 145. Theprotrusion 145 enhances adhesive force in the outward direction (see A1in FIG. 2) of the second conductive semiconductor layer 130 to preventmovement of the second conductive semiconductor layer 130 and thechannel layer 140.

Further, the protrusion 145 of the channel layer 140 can delay orprevent penetration of moisture in the inward direction (see A2 in FIG.2) of the second conductive semiconductor layer 130. Referring to FIGS.8 and 9, the electrode layer 150 is formed on the second conductivesemiconductor layer 130 or the third conductive semiconductor layer. Theelectrode layer 150 may be formed on the channel layer 140. Theconductive support member 160 is formed on the electrode layer 150. Theelectrode layer 150 may be formed on a portion or the entire portion ofthe second conductive semiconductor layer 130 by using a sputteringapparatus. The electrode layer 150 may be formed by using at least onematerial including seed material, ohmic material, reflective materialand adhesion material.

The electrode layer 150 may comprise at least one of a reflectiveelectrode layer, an ohmic-contact layer, and an adhesion layer. Theelectrode layer 150 may include at least one of metallic material andoxide material. The reflective electrode layer may includes at least oneof Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, or the selectivecombination of the above. The ohmic-contact layer may include at leastone at least one selected from the group consisting of ITO (indium tinoxide), IZO (indium zinc oxide), IZTO(indium zinc tin oxide),IAZO(indium aluminum zinc oxide), IGZO(indium gallium zinc oxide),IGTO(indium gallium tin oxide), AZO(aluminum zinc oxide), ATO(antimonytin oxide), GZO(gallium zinc oxide), IrOx, RuOx, RuOx/ITO, Ni/IrOx/Au,and Ni/IrOx/Au/ITO, Pt, Ni, Au, Rh and Pd. The adhesion layer mayinclude at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, and Ta.The electrode layer 150 may comprises a seed metal.

A layer or a plurality of patterns may be further formed between thesecond conductive semiconductor layer 130 and the electrode layer 150,so current distribution caused by resistance difference can bedispersed. The layer or the plurality of patterns includes at least oneof SiO₂, SiO_(x), SiO_(x)N_(y), Si₃N₄, Al₂O₃, TiO₂, ITO, IZO, IZTO,IAZO, IGZO, IGTO, AZO, ATO, GZO, IrOx, and RuOx.

An ohmic-contact layer (not shown) may be further formed between theelectrode layer 150 and the second conductive semiconductor layer 130.The ohmic-contact layer may include a layer or a plurality of patterns.The ohmic-contact layer includes at least one selected from the groupconsisting of indium tin oxide (ITO), indium zinc oxide (IZO), indiumzinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium galliumzinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide(AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx,RuOx/ITO, Ni/IrOx/Au and Ni/IrOx/Au/ITO, but the embodiment is notlimited thereto.

The conductive support member 160 is formed on the electrode layer 150.The conductive support member 160 may function as the base substrate.The conductive support member 160 may include Cu, Au, Ni, Mo, Cu—W, andcarrier wafer such as Si, Ge, GaAs, ZnO, SiC, SiGe and GaN. Theconductive support member 160 may be formed through the electrolyticplating scheme or can be prepared in the form of the sheet. However, theembodiment is not limited thereto.

The electrode layer 150 and the conductive support member 160 can beprepared in the form of a layer or a pattern. The conductive supportmember 160 may have a thickness of about 30 μm to about 150 μm. However,the embodiment is not limited thereto. The electrode layer 150 and theconductive support member 160 can be prepared in the form of a singleelectrode layer, e.g., the electrode layer. However, the embodiment isnot limited thereto.

Referring to FIGS. 9 and 10, after the conductive support member 160 isdisposed on a base, the substrate 101 is removed. The substrate 101 maybe removed using a physical method and/or a chemical method. Accordingto the physical method called laser lift off (LLO), laser having apredetermined wavelength range is irradiated onto the substrate 101, sothe substrate 101 is separated from the first conductive semiconductorlayer 110. According to the chemical method, when another semiconductorlayer (e.g., a buffer layer) is formed between the substrate 101 and thefirst conductive semiconductor layer 110, the buffer layer is removedusing wet etch solution, so the substrate 101 is separated from thefirst conductive semiconductor layer 110.

After the substrate 101 is removed, the first conductive semiconductorlayer 110 is subject to an etching process using inductively coupledplasma/reactive ion etching (ICP/RIE).

The channel layer 140 and the protrusions 145 thereof can preventdelaminating of the second conductive semiconductor layer 130.

Referring to FIGS. 11 and 12, the light emitting structure 135 ispartially removed by performing isolation etching relative to a boundaryarea (i.e. a channel area) between chips. The isolation etching isperformed in such a manner that the channel layer 140 is exposed throughthe chip boundary area (i.e. the channel area). However, the embodimentis not limited thereto. In such a case, the channel layer 140 and theprotrusions 145 can minimize lateral delaminating of the light emittingstructure, which may occur during the isolation etching, that is, theKOH etching process.

During the isolation etching, the outer peripheral portion of the lightemitting structure 135 is cut, so the light emitting structure 135 canbe further spaced apart from the conductive support member 160.

The laser passes through the channel layer 140, so fragments caused bythe conductive support member 160 or the electrode layer 150 can beminimized.

Then, the semiconductor light emitting device 100 is divided into a chipunit through a breaking process as shown in FIG. 12. Laser may be usedto prepare the chip unit.

The electrode 171 is formed under the first conductive semiconductorlayer 110 and may have a predetermined shape. Further, the electrode 171can be prepared in the form of a predetermined pattern. The electrode171 maybe formed before or after the isolation etching process isperformed, or after the chip separation process is performed. However,the embodiment is not limited thereto.

After the isolation etching process is performed, the roughness patterncan be formed on the bottom surface of the first conductivesemiconductor layer 110 to improve external quantum efficiency.

FIG. 13 is a side sectional view showing a semiconductor light emittingdevice according to a second embodiment. The same reference numeralswill be assigned to elements identical to those of the first embodiment,and details thereof will be omitted.

Referring to FIG. 13, the semiconductor light emitting device 100Aincludes the light emitting structure 135, the channel layer 140 havingthe protrusions 145, an ohmic contact layer 155, the electrode layer 150and the conductive support member 160.

The ohmic contact layer 155 can be formed on an interface between theelectrode layer 150 and the second conductive semiconductor layer 130 inthe form of a plurality of patterns. The ohmic contact layer 155 mayhave a matrix pattern or a stripe pattern.

The ohmic contact layer 155 can enhance adhesive force relative to thesecond conductive semiconductor layer 130 together with the channellayer 140 and the protrusions 145.

The ohmic contact layer 155 may include at least one selected from thegroup consisting of ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, GZO,IrOx, RuOx, RuOx/ITO, Ni/IrOx/Au and Ni/IrOx/Au/ITO.

The ohmic contact layer 155 can be prepared in the form of protrusionscorresponding to grooves formed in the inner side of the upper surfaceof the second conductive semiconductor layer 130.

Further, the second conductive semiconductor layer 130 makes contactwith the ohmic contact layer 155 and the electrode layer 150, so currentdistribution caused by ohmic resistance difference can be dispersed.

An embodiment provides a method for manufacturing a semiconductor lightemitting device, the method comprising the steps of: forming a lightemitting structure including a first conductive semiconductor layer, anactive layer on the first conductive semiconductor layer and a secondconductive semiconductor layer on the active layer; forming groovesalong an upper peripheral portion of the second conductive semiconductorlayer; forming a channel layer along an peripheral portion of an uppersurface of the second conductive semiconductor layer; and forming anelectrode layer on an inner side of the upper surface of the secondconductive semiconductor layer.

According to the embodiment, interlayer adhesive force between thecompound semiconductor layer and another layer is enhanced, so lateraldelaminating can be minimized.

According to the embodiment, the conductive support member is spacedapart from the light emitting structure, so the chip reliability can beimproved and the manufacturing process can be simplified.

According to the embodiment, the reliability of a vertical semiconductorlight emitting device can be improved.

The embodiments can provide a semiconductor light emitting device suchas an LED.

The embodiments can improve electrical reliability of the semiconductorlight emitting device.

The embodiments can improve light efficiency of the semiconductor lightemitting device.

According to the embodiments, a light source packaged with thesemiconductor light emitting device can be employed in the fields ofillumination, indication, display and the like.

Although embodiments have been described with reference to a number ofillustrative embodiments thereof, it should be understood that numerousother modifications and embodiments can be devised by those skilled inthe art that will fall within the spirit and scope of the principles ofthis disclosure. More particularly, various variations and modificationsare possible in the component parts and/or arrangements of the subjectcombination arrangement within the scope of the disclosure, the drawingsand the appended claims. In addition to variations and modifications inthe component parts and/or arrangements, alternative uses will also beapparent to those skilled in the art.

What is claimed is:
 1. A semiconductor light emitting device comprising:a light emitting structure including a first conductive semiconductorlayer, a second conductive semiconductor layer under the firstconductive semiconductor layer, and an active layer between the firstand second semiconductor layers; a conductive support member disposedunder the second conductive semiconductor layer; an insulating layerdisposed between the second conductive semiconductor layer and theconductive support member; and a stepped conductive layer disposedbetween the second conductive semiconductor layer and the conductivesupport member, wherein the stepped conductive layer includes aplurality of lower parts spaced apart from each other and a plurality ofupper parts bent from at least one of the lower parts, wherein theplurality of upper parts of the stepped conductive layer are directlycontacted with the second conductive semiconductor layer, wherein theplurality of lower parts of the stepped conductive layer are disposedbetween the insulating layer and the conductive support member, andwherein the insulating layer is laterally disposed between the pluralityof upper parts.
 2. The semiconductor light emitting device of claim 1,wherein the plurality of lower parts are directly contacted with a lowersurface of the insulating layer.
 3. The semiconductor light emittingdevice of claim 1, wherein the insulating layer includes a plurality ofregions spaced apart from each other between the plurality of upperparts of the stepped conductive layer.
 4. The semiconductor lightemitting device of claim 3, wherein each of the plurality of regions ofthe insulating layer are corresponded to each of the plurality of lowerparts of the stepped conductive layer.
 5. The semiconductor lightemitting device of claim 3, wherein an outer part of the steppedconductive layer is horizontally extended from the lower part of thestepped conductive layer.
 6. The semiconductor light emitting device ofclaim 5, wherein the outer part of the stepped conductive layer, isvertically over lapped with an outer region of the insulating layer. 7.The semiconductor light emitting device of claim 6, wherein a top of theouter region of the insulating layer is located at an outer positionthan an outer sidewall of the light emitting structure.
 8. Thesemiconductor light emitting device of claim 6, wherein the top of theouter region of the insulating layer is not overlapped with the lightemitting structure in a vertical direction.
 9. The semiconductor lightemitting device of claim 5, wherein the outer part of the steppedconductive layer is not overlapped with the light emitting structure ina vertical direction.
 10. The semiconductor light emitting device ofclaim 3, wherein the conductive support member is formed of a metalhaving Cu and W.
 11. A semiconductor light emitting device comprising: alight emitting structure including a first conductive semiconductorlayer, a second conductive semiconductor layer under the firstconductive semiconductor layer, and an active layer between the firstand second semiconductor layers; a conductive support member disposedunder the second conductive semiconductor layer; an insulating layerdisposed between the second conductive semiconductor layer and theconductive support member; and a stepped conductive layer disposedbetween the second conductive semiconductor layer and the conductivesupport member; wherein the stepped conductive layer includes aplurality of lower parts spaced apart from each other and a plurality ofupper parts bent from at least one of the lower parts, wherein theplurality of upper parts are directly contacted with the secondconductive semiconductor layer, wherein the plurality of lower parts aredisposed between the insulating layer and the conductive support member,wherein the insulating layer includes a plurality of regions overlappedvertically between the second conductive semiconductor layer and thelower parts, and wherein each of the plurality of regions of theinsulating layer is directly contacted with a bottom surface of thesecond conductive semiconductor layer.
 12. The semiconductor lightemitting device of claim 11, wherein the conductive support member isformed of a metal having Cu and W.
 13. The semiconductor light emittingdevice of claim 11, wherein at least one of the plurality of upper partsof the stepped conductive layer is disposed between the plurality ofregions of the insulating layer.
 14. The semiconductor light emittingdevice of claim 11, wherein each of the plurality of regions of theinsulating layer are contacted with each of the plurality of lower partsof the stepped conductive layer.
 15. The semiconductor light emittingdevice of claim 11, wherein an outer part of the stepped conductivelayer is horizontally extended from the lower part.
 16. Thesemiconductor light emitting device of claim 15, wherein the outer partof the stepped conductive layer is vertically over lapped with an outerregion of the insulating layer, wherein a top of the outer region of theinsulating layer is exposed on an outer sidewall of the light emittingstructure.
 17. A semiconductor light emitting device comprising: a lightemitting structure including a first conductive semiconductor layer, asecond conductive semiconductor layer under the first conductivesemiconductor layer, and an active layer between the first and secondsemiconductor layers; a conductive support member disposed under thesecond conductive semiconductor layer; an insulating layer includes aplurality of regions space apart from each other between the secondconductive semiconductor layer and the conductive support member; and astepped conductive layer disposed between the second conductivesemiconductor layer and the conductive support member, wherein an outerregion of the insulating layer is outwardly extended from an outersidewall of the light emitting structure.
 18. The semiconductor lightemitting device of claim 17, wherein the outer region of the insulatinglayer is not overlapped with the light emitting structure in a verticaldirection.
 19. The semiconductor light emitting device of claim 17,wherein an outer part of the stepped conductive layer is not overlappedwith the light emitting structure in a vertical direction.
 20. Thesemiconductor light emitting device of claim 19, wherein an outer partof the stepped conductive layer is horizontally extended from the lowerpart.